| 摘要 |
A nonvolatile memory device includes a substrate (10) provided with an insulator layer (11). A conductive gate (12) is located on the insulator layer (11) and has provided thereon a silicon nitride layer (13, 13') and a silicon dioxide layer (14) having a relatively thin central portion (16). Overlying the silicon dioxide layer is a recrystallized polysilicon layer (17') including a channel region (20) and source and drain regions (21, 22) having boundaries aligned with the boundaries of the gate (12). The device is manufactured by forming the layers successively, the thin oxide (16) being formed by oxidation of the underlying nitride (13') after removal of the thick oxide in the central portion above the gate (12). The polysilicon layer (17') is recrystallized by subjecting it to laser radiation prior to forming the source and drain regions (21, 22). |
