发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To easily perform a high-speed PCM drive by a method wherein an active layer and a guide layer are interposed between clad layers, Zn is diffused in the N type active layer in a stripe-formed region, which has been constituted of the layers, etc., and have two wide width parts in a prescribed form, a region compensated with impurities is formed, and a current injecting mechanism is independently provided. CONSTITUTION:An N type Al0.32Ga0.68As clad layer 11, an N type Al0.25Ga0.75As guide layer 12, an N type Al0.15Ga0.85As active layer 13 and an N type Al0.4Ga0.6As clad layer 14 are laminated on an N type GaAs substrate 10. The clad layer 14 is covered with an SiO2 film 15, an etching is selectively performed, a stripe-formed region, which is narrow in width in the center and the vicinities of the both reflective surfaces and has two broad width parts, is formed in the lengthwise direction of a resonator, and theta is chosen at 0 deg.<theta<14 deg. at the boundaries with the narrow width parts. The both sides of the region are buried in with a P<-> type Al0.35Ga0.65 As 16. Then, the film 15 is removed, the surface of the region including one of the 16 is covered with an SiO2 17, windows are opened at the broad width regions to diffuse 18 Zn up to the active layer 13, P type ohmic electrodes 19 and 20 are attached, and an N type ohmic electrode 21 is attached to the substrate 10. When a constant current is injected in a diffusion layer 18 on one side of bring the layer 18 into an excited state and on-off control of current injection is repeated to a diffusion layer 18 on the other side, a PCM movement generates. As a result, current flow to be injected is controlled and an optical oscillation with a large output is obtained.
申请公布号 JPS59197181(A) 申请公布日期 1984.11.08
申请号 JP19830071056 申请日期 1983.04.22
申请人 NIPPON DENKI KK 发明人 UENO SHINSUKE
分类号 H01S5/00;H01S5/026;H01S5/0625;H01S5/10;H01S5/227 主分类号 H01S5/00
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