| 摘要 |
PURPOSE:To form a thin single crystal Si island having high quality on an insulator by forming an epitaxial Si film on an Si wafer and making the Si film insular. CONSTITUTION:Insular N type epitaxial Si layers 5 and N<+> type epitaxial Si layers 6 are formed on an N<+> type Si wafer 4. A thermal oxide Si film 7, an Si dioxide film 8 and an Si nitride film 9 are shaped on these layers. A substrate obtained in this manner is made a substrate A. A glass layer 10 is formed on the film 9. A P type Si wafer 11 (a substrate B) is prepared apart from the substrate A, and the glass layer 10 is formed on the wafer 11. The substrates A, B are bonded so that the layers 10 are opposed mutually. The wafer 4 in the substrate A is removed. Accordingly, an epitaxial island completely insulated and isolated by the films 7, 8 is shaped on the substrate B. Operating layers in a bipolar transistor are formed by shaping bases and emitters in the layers 5. |
