| 摘要 |
PURPOSE:To facilitate the pattern confirmation of elements by a method wherein a recess pattern to be used for positioning is formed on a semiconductor substrate by a process to be performed separately from the photoetching process for constitution of a circuit element, and a P-channel and N-channel MOS transistor is formed. CONSTITUTION:A photoresist film 12 is applied on an N type Si substrate 1, a rectangular pattern is provided avoiding an active region and a wiring region, and a recessed pattern 13 is formed on the surface layer part of the substrate 1 exposed in the pattern by performing an etching. Then, the film 12 is removed, a resist film 14 is applied burying the pattern 13, and the resist film 14 in the pattern 13 and on a well forming region is removed. Subsequently, a glass mask 16 whereon an aperture is provided is placed on said region, and a P type well region 18 is formed by implanting B-ions. Then, the mask 16 is removed, the gate electrode 20 to be used for P-channel and the gate electrode 21 for N-channel wherein the region 18 is used are provided, and source and drain regions are formed respectively on both sides of said electrodes. |
