| 摘要 |
PURPOSE:To flatten the step or irregularities of the surface of a substrate completely by thermally fluidizing a film formed on the substrate with the step or the irregularities and curing the film. CONSTITUTION:Si oxide patterns 2 are processed on an Si substrate 1. A film 3, which has thermal fluidity and is cured by ultraviolet rays, far ultraviolet rays, X-rays or the like, is formed on the whole surface of the substrate 1. The film 3 is baked to generate a flow, and the film 3 is further flattened. Ultraviolet rays, far ulraviolet rays, X-rays or the like are made to irradiate to the film 3 to cure the film 3, and the film 3 is changed into a film not deformed thermally even by the irradiation of rays. Accordingly, the step or irregularities of the surface of the substrate 1 can be brought close to a flat surface completely. |
