| 摘要 |
PURPOSE:To enable performing the connection of the arbitrary circuit efficiently and surely by projecting laser beam onto at least two electrodes for wiring of the semiconductor device and connecting the wiring electrodes melted by the heat generated by the irradiation. CONSTITUTION:An Al electrode 301 for first wiring and an Al electrode 302 for second wiring are combined, for example, in a comb-like formation in their connection parts with each other. Next, the whole surface is coated with a passivation film such as of polyimide and then this passivation film is patterned so as to arrange an opening 303. Next, the electrode 301 for first wiring and the electrode 302 for second wiring are irradiated with the laser beam with scanning through the opening 303 of the passivation film. As the two wiring electrodes melted by the energy of the laser beam solidifys again, the two wiring electrodes, the electrodes 301 for first wiring and the electrode 302 for second wiring are connected as designated by the circles 304. |
