| 摘要 |
PURPOSE:To obtain the semiconductor device having high performance, high integration and high reliability by a method wherein an insulating film is formed on a semiconductor substrate of specified impurity concentration and is then selectively removed by etching so as to form an element isolating region and a single crystal layer is deposited by selectively epitaxial growth to form an element region. CONSTITUTION:On a semiconductor substrate 101 in which impurity concentration at least of a partial region is 10<17>/cm<3> or more, an insulating film 102 is formed and is then selectively removed by etching to form an element isolating region 104. After that, on the part of the semiconductor substrate 101 which is isolated by the element isolating region 104, a single crystal semiconductor layer is deposited by selectively epitaxial growth so as to form an element region 105. For example, on a p<+> type Si substrate 101 including boron of 1X10<18>/cm<3>, an SiO2 film 102 is formed and is then selectively etched to form an element isolating region 104, after which p type single crystal Si is epitaxially grown selectively to form an element region 105. |
