| 摘要 |
PURPOSE:To obtain the semiconductor device having high performance, high integration and high reliability by a method wherein an insulating film is formed on a semiconductor substrate of specified impurity concentration and is then selectively removed by etching so as to form an element isolating region and a non-single crystal layer is deposited and is selectively etched, followed by irradiation with energy beam to single-crystallize said layer. CONSTITUTION:On a semiconductor substrate 1 in which impurity concentration at least of a partial region is 10<17>/cm<3> or more, an insulating film 102 is formed and is then selectively removed by etching so as to form an element isolating region 104 and a non-single crystal semiconductor layer 105 is deposited on that. After that the non-single crystal semiconductor layer 105 on the element isolating region 104 is selectively etched and this semiconductor layer 105 is buried in the part on the semiconductor substrate 101 which is isolated by the element isolating region 104. Then the semiconductor layer 105 is irradiated with energy beam to be single-crystallized and to form an element region 107. |
