| 摘要 |
PURPOSE:To increase an area displaying light emission by forming a P-N junction so as to shape a conduction type region of an approximately projecting section to a display section. CONSTITUTION:A diffusion mask film 3 with windows 2' in prearranged sections as display sections 2 is formed to the main surface of an N type semiconductor substrate 1 in which GaAsP is grown on GaAs, Zn is diffused to form P type regions 4, and P-N junctions 5 are shaped. Second diffusion masks 3' are formed to the display sections 2, and an N type impurity consisting of sulfur or tellurium is diffused to shape compensation regions 6. The surface sides are throttled in the P type regions 4, and insulating film 7 and electrodes 8 are formed to an approximately projecting section, thus manufacturing a light-emitting diode element. The form of display is brought as desired because luminous efficiency is high as in conventional devices in the P-N junctions 5 on the bottom sides of the P type regions 4 and the forms of the P-N junctions 5 take shapes controlled by the diffusion mask films 3. |
