| 摘要 |
PURPOSE:To obtain the semiconductor device having high performance, high integration and high reliability by a method wherein an insulating film is formed on a semiconductor substrate of specified impurity concentration and is then selectively removed by etching so as to form an element isolating region and a non-single crystal semiconductor layer is deposited and is irradiated with energy beam to be single-crystallized, for example. CONSTITUTION:On a semiconductor substrate 101 in which impurity concentration at least of a partial region is 10<17>/cm<3> or more, an insulating film 102 is formed and is then selectively removed by etching so as to form an element isolating region 104. After that, a non-single crystal semiconductor layer 105 is deposited and is irradiated with energy beam to be single-crystallized. Then a single crystal semiconductor layer 106 on the element isolating region 104 is selectively etched to form an element region 108 consisting of a single crystal semiconductor layer on the part of the semiconductor substrate which is isolated by the element isolating region 104. |
