发明名称 APPARATUS FOR MEASURING SURFACE HEIGHT OF SAMPLE IN CHARGED PARTICLE RAY APPARATUS
摘要 PURPOSE:To measure titled height in extremely high precision and to make an apparatus small-sized by providing at least one image forming lense along the axis crossing with the fixed angle against the axis of a charged particle beam at the vicinity of a sample surface. CONSTITUTION:Electrons emitted from an electron gun 1 are focused by a focusing lense 2, and projected on a cross section shaping slit 3. The electrons passed through the slit 3 are formed an image by the image forming lense 4 and the contracted image of the slit 3 is projected on a sample (wafer) 5. An XY deflector 6 is placed along the passage of the electron ray so that the shaped electron beam is scanned on the sample 5. The pattern signal is impressed to the deflector 6 by a computer 8 through an amplifier 7, and the desired IC pattern is drawn on a semiconductor wafer. Consequently, the measurement of extremely high precision is made possible and the size of the apparatus is made small.
申请公布号 JPS59195112(A) 申请公布日期 1984.11.06
申请号 JP19830070649 申请日期 1983.04.21
申请人 NIPPON DENSHI KK;NIPPON DENSHIN DENWA KOSHA 发明人 KITAYAMA TOYOKI;MORIYA SHIGERU;KOMATSU KAZUHIKO;OKINO TERUAKI
分类号 H01J37/30;G01B15/00;G01B15/02;G03F9/00;H01J37/28;H01L21/027 主分类号 H01J37/30
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