| 摘要 |
PURPOSE:To make the exchange of a vapor depositing material in a short time unnecessary even with rapid vaporization of the material by forming the vapor depositing material into a block when the crystal of the depositing material is grown by an epitaxial growth on a substrate as a film. CONSTITUTION:The vapor depositing material as a molecular beam source is not used in the form of small pieces and granules as before, but used in the form of a block which is packed directly into a crucible. A rod-shaped block 9 consisting of polycrystalline As, for example, is packed into a crucible 7. In this way, a large quantity of the vapor depositing material can be packed in a crucible having the same volume, and the consumption time of the vapor depositing material is made longer as much. Consequently, the time needed for the exchange, the stopping time of the vapor depositing operation while exchanging, and an evacuating operation after exchanging can be reduced. |
