发明名称 |
Ion implantation method |
摘要 |
An ion implantation method is provided which uses an ion implantation apparatus which is capable of focusing an ion beam into a spot having a diameter smaller than the size of a region into which ions are to be implanted. The ion dose is varied in accordance with the gate region, source and drain regions, and the field region of a semiconductor device including a transistor having short gate length and width.
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申请公布号 |
US4481042(A) |
申请公布日期 |
1984.11.06 |
申请号 |
US19820448048 |
申请日期 |
1982.12.08 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
TAKIGAWA, TADAHIRO;SASAKI, ISAO |
分类号 |
H01L29/78;H01J37/302;H01J37/317;H01L21/265;H01L21/336;(IPC1-7):H01L21/70 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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