发明名称 |
AMORPHOUS VANADIUM-GALLIUM COMPOUND MATERIAL AND ITS MANUFACTURE |
摘要 |
PURPOSE:To obtain an amorphous V-Ga compound material useful as a magnetic material, an ionic conductive material, a catalyst or the like by melting a mixture consisting of V2O5 and Ga2O3 in a specified ratio by heating and by cooling the melt very rapidly. CONSTITUTION:V2O5 is mixed with Ga2O3 so as to provide a composition represented by a formula (V2O5)1-x.(Ga2O3)x (where 0.70>=x>0). The starting material mixture is put in a tube 7 having a melt spraying nozzle 11. The mixture is melted by heating to a temp. above the m.p., and the melt is very rapidly cooled by spraying from the nozzle 11 on the surface of a roll 13 rotating at high speed to obtain the desired amorphous V-Ga compound material of high quality. An oriented polycrystalline thin film material is manufactured by heat- treating the compound material at a temp. below the crystallization temp. for a prescribed time. |
申请公布号 |
JPS59195532(A) |
申请公布日期 |
1984.11.06 |
申请号 |
JP19830066684 |
申请日期 |
1983.04.14 |
申请人 |
SHINGIJIYUTSU KAIHATSU JIGIYOUDAN;MASUMOTO TAKESHI;SUZUKI KENJI;MASUDA SHIYUUJI;OOTA YUKIHIRO |
发明人 |
MASUMOTO TAKESHI;SUZUKI KENJI;MASUDA SHIYUUJI;OOTA YUKIHIRO;OOKUBO YOSHITAKA |
分类号 |
C01G31/00;G02B6/12;G02F1/01;G02F1/03;G02F1/05;H01B3/12;H01F1/10;H01F1/11;H01F10/18;H01F10/187;H01G4/08;H01G4/10;H01G4/12;H01L41/18 |
主分类号 |
C01G31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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