| 摘要 |
PURPOSE:To grow SnO2 films on substrates in two steps of temp. in large quantities by installing the 1st growing chamber kept at the 1st temp. and the 2nd growing chamber kept at the 2nd temp. in parallel and by successively passing the substrates through both the chambers by means of a transferring mechanism. CONSTITUTION:The SnO2 film growing chamber of an apparatus 1 for continuously growing SnO2 films is composed of the 1st growing chamber 2 heated to the 1st temp. with a heating coil 7 and the 2nd growing chamber 3 heated to the 2nd temp., and both the chambers 2, 3 are installed in parallel with a separation chamber 4 in-between. Samples S are introduced into the chamber 2 with the surfaces downward through an inlet side chamber 5 filled with an atmosphere of a clean gas by means of a sample transferring mechanism 18 consisting of a driving wheel 20D, a following wheel 20I, and a sample transferring member 19 stretched between the wheels 20D, 20I such as a chain. The samples S are successively passed through the chambers 2, 4, 3, and they are taken out through an outlet side chamber 6 filled with an atmosphere of a clean gas. During this time, the 1st and the 2nd gaseous starting materials are fed to the chambers 2, 3 from feeding inlets 8, 9 and exhausted from exhaust ports 10, 11, respectively to grow SnO2 films on the samples S in two steps.
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