发明名称 LASER BEAM ANNEALING METHOD
摘要 PURPOSE:To stably perform an annealing by mounting a semiconductor substrate on a nonresonance cell in which a microphone is mounted, collecting atomic lattice distortion beat generated at the substrate by the emission of a laser beam, and controlling the heating of the laser beam. CONSTITUTION:A semiconductor substrate 3 is mounted on a nonresonance cell 1, and a microphone 2 is provided above the substrate 3. A laser light is emitted from a laser light source 6, and emitted through a chopper 7 and a beam splitter 8 to a thermoelectric detector 9 and the substrate 3. The atomic lattice distortion beat produced at the substrate 3 due to the beat shock of the laser beam is collected by the microphone 2, applied to a chopper 7 together with the output of the detector 9 through a preamplifier 10 and a lock-in amplifier 11, and the operation of the chopper 7 is controlled. Simultaneously, the both outputs are applied together with compared calibrated data through a ratiometer 14 to a laser controller 17, thereby controlling the source 6.
申请公布号 JPS59194430(A) 申请公布日期 1984.11.05
申请号 JP19830067752 申请日期 1983.04.19
申请人 OKI DENKI KOGYO KK 发明人 OGURA KEN;HAGIWARA SHIROU
分类号 H01L21/268;H01L21/26 主分类号 H01L21/268
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