发明名称 HIGH FREQUENCY TRAP CIRCUIT
摘要 PURPOSE:To obtain about 40dB attenuation at 800MHz and to obtain sufficiently practical trap effect reducing loss at 900MHz+ or -25MHz less than 30dB, by connecting a 1/4 wavelength leading and opening line and capacitive reactance to a transmission line. CONSTITUTION:The 1/4 wavelength leading end opening line 2 of 800MHz is connected to a transmission line 1 of 50OMEGA. A capacity reactance 3 is connected to the same coupling point P. Since the impedance of the line 2 approaches zero at 800MHz, the line 2 is acted as a trap circuit. However, the line 2 is acted as an inductive reactance at the wavelength of frequency higher and close than/ to 800MHz. Therefore, selection of the value of capacitive reactance 3 makes it possible to cancel the inductive reactance and make the reactance approach specific impedance. When the impedance of a transmission line 1 approaches the specific impedance, the loss of insertion can be regarded as approximately zero.
申请公布号 JPS59194502(A) 申请公布日期 1984.11.05
申请号 JP19830070314 申请日期 1983.04.20
申请人 MATSUSHITA DENKI SANGYO KK 发明人 MINATO TAKESHI
分类号 H01P1/203;H01P1/201;H04B1/10 主分类号 H01P1/203
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