| 摘要 |
PURPOSE:To enhance the photoelectric conversion efficiency by forming at least one semiconductor layer in the mixture of a thin amorphous silicon fine crystal film and a thin material film having large energy gap. CONSTITUTION:A thin amorphous silicon fine crystal film P2 is formed to bury between a thin discontinuous film P1 having large energy gap on a substrate to form a P type semiconductor layer 19. Then, an I-type semiconductor layer 20 is formed, an N type semiconductor layer 21 is formed thereon, to form a photoelectric generating element. The semiconductor layer of a light incident side formed in this manner can be formed to mix the thin material film P1 and the crystal film P2, thereby providing excellent light transmission and preferable conductivity. |
