摘要 |
PURPOSE:To improve dynamic characteristics by driving plural power transistors (TR) by field effect transistors (FET). CONSTITUTION:A high-voltage sweep power source circuit is formed by connecting sources of small-signal FETs TR6-TR9 to bases of TR2-TR5 among TR1-TR6 connected in series, and further connecting auxiliary power source circuits C1-C4, D1-D4, and T1-T4 for supplying fine electric power to their drains respectively. When the TR1-TR5 are off, a flowout current to an output by balance resistances R11-R15 is small and auxiliary power source capacity for compensating 0V is reduced. Further, drain power source currents of said TR6-TR9 are required only to compensate maximum values of base currents of the TR2-TR5, so only extremely small capacity is required. |