发明名称 HIGH VOLTAGE SWEEP POWER SOURCE CIRCUIT
摘要 PURPOSE:To improve dynamic characteristics by driving plural power transistors (TR) by field effect transistors (FET). CONSTITUTION:A high-voltage sweep power source circuit is formed by connecting sources of small-signal FETs TR6-TR9 to bases of TR2-TR5 among TR1-TR6 connected in series, and further connecting auxiliary power source circuits C1-C4, D1-D4, and T1-T4 for supplying fine electric power to their drains respectively. When the TR1-TR5 are off, a flowout current to an output by balance resistances R11-R15 is small and auxiliary power source capacity for compensating 0V is reduced. Further, drain power source currents of said TR6-TR9 are required only to compensate maximum values of base currents of the TR2-TR5, so only extremely small capacity is required.
申请公布号 JPS59194220(A) 申请公布日期 1984.11.05
申请号 JP19830066958 申请日期 1983.04.18
申请人 NIPPON DENSHI KK 发明人 FUJII KOUICHI
分类号 G05F1/613;G05F1/595;H02M7/21 主分类号 G05F1/613
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