| 摘要 |
PURPOSE:To obtain the titled device of excellent and constant operating characteristics by a method wherein a source electrode and a drain electrode are made of the alloy of Al and a transition metal. CONSTITUTION:A poly Si 2 is vapor deposited in vacuum on an insulator 1, and the surface is treated with O2 plasma, thus preventing the change fof the OFF- resistance of the device to be obtained with time. Next, an Al2O3 gate insulation film 3 is provided by sputtering, and an Al gate electrode 6 is attached. The use of the alloy containing the transition metal such as Ni in Al at the molar ratio of 5-50% enables to restrain the Al diffusion to the crystal boundary of the poly Si. Therefore, the annealing treatment after completing the titled device is enabled to perform at a high temperature, and accordingly the operating characteristics of the thin film transistor can be largely improved. |
