发明名称 TARGET IN SPUTTERING AND SPUTTERING METHOD
摘要 PURPOSE:To obtain a composite target for forming a homogeneous alloy film on the surface of a substrate, by preparing a substrate from one metal material, and inlaying another metal material in cavities formed on the surface of said substrate so as to form a flush plane. CONSTITUTION:Circular cavities 11A are provided on the surface of a substrate 11 comprising one metal material by mechanical working or the like. Discs 12 comprising another metal material having shapes corresponding to said cavities 11A are tightly inserted in said cavities 11A in a manner such that the surface of the substrate 11 is made at the same level as those of the surfaces of the discs 12, to form a composite target. By performing sputtering using this target, a homogeneous alloy film is formed on the surface of a base plate.
申请公布号 JPS59193272(A) 申请公布日期 1984.11.01
申请号 JP19830067591 申请日期 1983.04.15
申请人 DAIDO TOKUSHUKO KK 发明人 SHICHI EIICHI
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址