| 摘要 |
A photoelectric conversion device in which a plurality n (n being an integer large than one) of semiconductor elements U1 to Un are sequentially formed on a substrate in a side-by-side relation and connected in series one after another. The substrate is formed by an insulating sheet-like member having an insulating film formed on a flexible metallic sheet-like member. The element Ui (i=1, 2, . . . n) has a first electrode Ei, a non-single-crystal semiconductor laminate member Qi formed on the first electrode Ei and having formed therein at least one PN or PIN junction, and a second electrode Fi formed on the semiconductor laminate member Qi. The element Ui is formed by the following process (a) a first conductive layer which will ultimately serve as the first electrode Ei is formed on the substrate and then subjected to a first laser beam scanning, (b) a non-single-crystal semiconductor laminate member which will ultimately serve as the semiconductor laminate member Qi is formed to cover the first electrode Ei and then subjected to a second laser beam scanning, (c) a second conductive layer which will ultimately serve as a second electrode Fi is formed on the semiconductor laminate member Qi and then subjected to a third laser beam scanning. |
