| 摘要 |
PURPOSE:To obtain a flash irradiation device suitable for a wafer having a broad area by a method wherein flash electric-discharge lamps of a large number having a mirror on the topside and moreover having a gas discharge member on the underside are arranged in a semiconductor wafer annealing device case, a sample base built in with a preliminarily heating furnace is inserted from a door on the topside to be moved up to the underside of the electric-discharge lamps, and annealing is performed according to the electric-discharge lamps. CONSTITUTION:Flash electric-discharge lamps 5 of a large number having a ship's bottom type sectional mirror 6 on the topside, and moremover having an atmosphere controlling gas discharge member 7 on the underside are arranged at the ceiling part of a corner in an annealing device case 1, and irradiation space 4 is generated thereunder. Then a sample base 8 built in with a preliminarily heating furnace mounting a semiconductor wafer 2 is positioned in sample treatment space 3 positioning thereunder according to the operation of a door 1a provided on the topside of the corner of the case 1. After then, the sample base 8 is reciprocatingly transferred in the irradiation space 4, and the prescribed annealing is performed. Accordingly, shortening of the life of the electric-discharge lamps 5 according to heat radiated from the sample base 8 is not generated, and moreover treatment of a wafer 2 having a large area is also facilitated.
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