| 摘要 |
PURPOSE:To obtain a wafer dry cleaning device having a high processing effect by a method wherein the device to perform dry cleaning of a semiconductor wafer is constructed of a process chamber having inside an ultraviolet light source, and moreover to generate ozone by feeding O2 gas, and a carrying in and out part of the wafer therefrom is constructed of taper type wafer pads to come in contact with the circumference of the wafer in dotted manner. CONSTITUTION:A cleaning chamber 6 and a cleaning supplementing chamber 7 are provided adjoining mutually on an electric control part 5, a gas feed opening 8 is dug to the cleaning chamber 6, and an O2 gas source 12 and an N2 gas source 13 are connected thereto through a filter 11. Moreover an exhaust vent 16 is provided to the cleaning supplementing chamber 7, and processed gas is exhausted therefrom. At this construction, a long sideways ?-shape fork 18 constructing a carrying in and out part 3 is made to advance and retreat from the chambers 7, 6, and in the chamber 6, ultraviolet rays radiated from lamps 9 are irradiated to the surface and the back of a wafer 4 on wafer pads 25 provided at the tip thereof, in the chamber 7, static electricity is removed by lamps 14, and at the same time, rereaction of ozone is removed using lamps 15. At this time, the wafer pads 25 are constructed of a pair of holders 26a, 26b having the taper faces, and the wafer 4 is supported by dots. |
