发明名称 RESIN-MOLDED TYPE SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To improve moisture resistant property by a method wherein the top surface layer of the part of each inner lead of a lead frame which reaches a pad to which a connecting wire is bonded is composed of metal or alloy which has reactivity with chlorine ions. CONSTITUTION:A metallic layer 9 made of metal or alloy which has reactivity with chlorine ions is applied to the surface of the part of each inner lead 4 which reaches a pad 8 to which a connecting wire is bonded. The metallic layer 9 is composed of, for instance, Ag or Ag alloy such as Ag solder by a method such as plating, evaporation or coating. A semiconductor element is mounted on a semiconductor element mounting part of a lead frame, whose leads are provided with such metallic layers 9 on their top surface layers, and, after the element and the pads are connected by wire bonding with connecting wires, transfer molding is carried out with resin such as epoxy resin. With this constitution, covalent bond between Cl ion and Ag can be formed and the Cl ions can be inactivated so that Al of the element can be protected from corrosion.</p>
申请公布号 JPS6224649(A) 申请公布日期 1987.02.02
申请号 JP19850161953 申请日期 1985.07.24
申请人 HITACHI VLSI ENG CORP;HITACHI LTD 发明人 TSUKADA HIROMI;TOYODA YASUTAKA
分类号 H01L23/50;H01L23/28;H01L23/48 主分类号 H01L23/50
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