| 摘要 |
A semiconductor pressure sensor comprises a sealed housing (1, 2) which has a metallic baseplate (2) and whose interior space is a reference-pressure chamber. Mounted on the baseplate (2) are a pressure-sensitive semiconductor membrane (6) which is exposed, on the one hand, to the pressure in the interior of the housing and, on the other hand, an external pressure to be measured, and a circuit substrate (9) which supports a circuit connected to strain measurement regions of the semiconductor membrane (6). One side of the circuit substrate (9) is mounted on a metal plate (16) whose coefficient of thermal expansion is approximately equal to that of the material of the circuit substrate (9). The other side of said metal plate (16) is mounted locally on the metallic baseplate (2). <IMAGE>
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