发明名称 ELECTRONIC DEVICE HAVING MULTILAYER INTERCONNECTION STRUCTURE
摘要 PURPOSE:To reduce the thermal stress to generate after a resin sealing was performed by a method wherein an inorganic insulating material is used as an interlayer insulating film between wirings and organic resin material are used as a final passivation film. CONSTITUTION:A P type semiconductor region 11, an SiO2 film 12, a first layer wiring 13 and an inorganic insulating film 14 to protect the wiring 13 are formed on a substrate 10 of electronic parts. A second wiring 15 and a bonding pad 16 are arranged on the film 14. A CVD-PSG film 17a and a polyimide resin film 17b are formed on the wiring 15 as a final passivation film. Wire-bonded semiconductor parts are molded with a thermosetting resin 19.
申请公布号 JPS59191353(A) 申请公布日期 1984.10.30
申请号 JP19830065337 申请日期 1983.04.15
申请人 HITACHI SEISAKUSHO KK;HITACHI MAIKURO COMPUTER ENGINEERING KK 发明人 FUJIOKA KAZUMICHI;KATOU TOKIO;TAKAHASHI HIDEKAZU
分类号 H01L21/768;H01L21/312;H01L23/31;H01L23/522;H01L23/532 主分类号 H01L21/768
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