发明名称 |
ELECTRONIC DEVICE HAVING MULTILAYER INTERCONNECTION STRUCTURE |
摘要 |
PURPOSE:To reduce the thermal stress to generate after a resin sealing was performed by a method wherein an inorganic insulating material is used as an interlayer insulating film between wirings and organic resin material are used as a final passivation film. CONSTITUTION:A P type semiconductor region 11, an SiO2 film 12, a first layer wiring 13 and an inorganic insulating film 14 to protect the wiring 13 are formed on a substrate 10 of electronic parts. A second wiring 15 and a bonding pad 16 are arranged on the film 14. A CVD-PSG film 17a and a polyimide resin film 17b are formed on the wiring 15 as a final passivation film. Wire-bonded semiconductor parts are molded with a thermosetting resin 19. |
申请公布号 |
JPS59191353(A) |
申请公布日期 |
1984.10.30 |
申请号 |
JP19830065337 |
申请日期 |
1983.04.15 |
申请人 |
HITACHI SEISAKUSHO KK;HITACHI MAIKURO COMPUTER ENGINEERING KK |
发明人 |
FUJIOKA KAZUMICHI;KATOU TOKIO;TAKAHASHI HIDEKAZU |
分类号 |
H01L21/768;H01L21/312;H01L23/31;H01L23/522;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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