发明名称 Compact ROM with reduced access time
摘要 Access time is reduced by isolating the relatively high impedance stack, formed of series connected driver transistors, from a relatively high capacitive output. The driver transistors are either enhancement mode or depletion mode transistors, depending upon the information to be represented thereby. An isolation transistor has its control terminal connected to the stack through a control node and its output circuit connected between the output node and ground. The output node is connected through a load to a positive voltage. A switched ground technique is used to charge the control node prior to addressing. During readout, if any of the series connected driver transistors in the selected stack are not rendered conductive, due to the level of the address signals applied thereto, the control node remains charged causing the isolation transistor to remain conductive and the output node is thus discharged. To increase density, multiple stacks are connected in parallel to a single isolation transistor.
申请公布号 US4480320(A) 申请公布日期 1984.10.30
申请号 US19820383709 申请日期 1982.06.01
申请人 GENERAL INSTRUMENT CORP. 发明人 NAIFF, KENNETH L.
分类号 G11C17/00;G11C17/12;G11C17/18;(IPC1-7):G11C11/40 主分类号 G11C17/00
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