| 摘要 |
PURPOSE:To prevent a leakage phenomenon by forming a charge storage section into a small hole electrically isolated from a semiconductor substrate and removing an unnecessary depletion region from a capacitance section in the capacitance section of a memory cell. CONSTITUTION:Small holes 3 are formed on a p type semiconductor substrate 1, and the capacitance sections C1, C2 of memory cells are constituted. An insulating film 6 electrically isolates the semiconductor substrate 1 and a first capacitance plate 9. A capacitance insulating film 8 is positioned at the intermediate section of the first capacitance plate 9 and a second capacitance plate 12, and stores information charges. An insulating film 10 isolates both the first capacitance plate 9 and the substrate 1 and the second capacitance plate 12. A connecting hole 11 connects the plate 12 and a semiconductor region. An insulating film 14 isolates the capacitance sections of adjacent memory cells and the plate 12 and word lines 15. n<+> semiconductor regions 16 constitute a MISFETQ1. Insulating films 17 isolate the word lines 15 and a bit line 19. A connecting hole 18 connects the semiconductor region 16 and the bit line 19. |
