| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit being able to design at a high density, by constituting so as to enable to overlap each other one source supply on the N-channel side and one source supply on the P-channel side when a logical circuit block is arrayed with being overlapped in a mirror state. CONSTITUTION:Concerning the P-channel side, a potential is supplied to the source region 13 through the contact 6 from the metal 2 for supplying power. At this time, the center of the contact 6 to the source region is placed on the outer frame 17, is connected in series to the channel regions 18, 19 in which polycrystalline silicon 8, 9 constitutes gate electrodes, and is connected to the metal 15 through the contact 7 from the drain region 14. On the P-channel side, a potential is supplied to the source regions 10, 12 through the contacts 3, 5 from the metal 1 for supplying power. At this time, the center of the contact 3 is placed on the outer frame 17 of the logical circuit block. Through the channel regions 20, 21 in which polycrystalline silicon 8, 9 constitutes gate electrodes, the drain region 11 is connected to the metal 15 through the contact 4. |
