发明名称 |
MULTILAYER PHOTOCONDUCTIVE ASSEMBLY WITH INTERMEDIATE HETEROJUNCTION |
摘要 |
<p>A multilayer photoconductive assembly with an intermediate heterojunction. The assembly comprises a conductive substrate, a thin semiconductive layer formed of a material of one carrier polarity, which material has a narrow band gap. This layer is in substantially ohmic (low-resistive) contact with the conductive substrate. A light-absorbing layer is formed of a semiconductor which is thicker than the first layer and is of a carrier polarity opposite to the polarity of the first layer. The material has a band gap wider than the band gap of the first layer. The first and second semiconductive layers form a rectifying heterojunction therebetween. This enables the assembly to have a tremendously increased dark resistance and produces an assembly enabling high-speed electrophotography.</p> |
申请公布号 |
CA1176904(A) |
申请公布日期 |
1984.10.30 |
申请号 |
CA19820404256 |
申请日期 |
1982.06.01 |
申请人 |
SAVIN CORPORATION |
发明人 |
SHER, ARDEN;MOONEY, JOHN B. |
分类号 |
G03G5/00;G03G5/043;G03G5/08;G03G5/082;(IPC1-7):G03G5/08 |
主分类号 |
G03G5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|