| 摘要 |
PURPOSE:To enhance sensitivity to far ultraviolet rays, electron beams, and dry etching resistance, too, by using a specified compound (polymer) having silyl ether groups for a resist material. CONSTITUTION:The compound to be used for the resist material has at least one silyl group represented by the formula shown on the right. This silyl ether group is directly dissociated in Si-O-C bonds and solubilized in solvents, but these ether bonds have high resistance to oxygen plasma dry etching. This compound layer is formed on a substrate, such as a silicon wafer, irradiated with ultraviolet rays or the like, and the exposed parts are developed, and etched with oxygen plasma, and since the compound is high in dry etching resistance, a positive type fine pattern can be formed. |
