发明名称 FORMATION OF SOLID ELECTROLYTIC THIN FILM
摘要 PURPOSE:In a method for forming solid electrolytic thin film onto titanium disulfide or positive pole material for a lithium cell through spattering, to form the solid electrolytic film without oxidizing the substrate. CONSTITUTION:When forming 0.6Li4SiO4.0.4Li3PO4 electrolytic film onto TiS2 thin film on a silicon substrate through spattering, the temperature of substrate is controlled to -20-150 deg.C while low output spattering is performed at the initial stage of spattering to prevent oxidation of TiS2 and to form solid electrolytic thin film. Since TiS2 has high ion conductivity and electron conductivity, if solid electrolytic thin film can be formed on it, thin film solid cell or ECD element can be produced.
申请公布号 JPS59191267(A) 申请公布日期 1984.10.30
申请号 JP19830065415 申请日期 1983.04.15
申请人 HITACHI SEISAKUSHO KK 发明人 KANEBORI KEIICHI;MIYAUCHI KATSUMI;KUDOU TETSUICHI
分类号 H01M4/58;H01M6/18;H01M10/0562;H01M10/058 主分类号 H01M4/58
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