发明名称 HEAT-TREATMENT APPARATUS
摘要 PURPOSE:To make the gas density and the temperature in a reaction tube uniform and realize the uniform heat-treatment of wafers by avoiding the swallowing up the atmosphere and the radiation of heat at the opening of the reaction tube. CONSTITUTION:A cap 22 and an auxiliary cap 23, which are independent of each other, are supported at the base end of a fork 12. A labyrinth composition is formed with the cap 22 and the auxiliary cap 23 so that an opening of a reaction tube 10 is closed. Therefore, the swallowing up the atmosphere into the reaction tube 10 is avoided and, with the cooperation of a heat-insulating cover 21, the heat in the reaction tube 10 is prevented from radiating out. With this constitution, the uniform heat-treatment of wafers 14 can be realized and the quality can be improved.
申请公布号 JPS59191328(A) 申请公布日期 1984.10.30
申请号 JP19830065443 申请日期 1983.04.15
申请人 HITACHI SEISAKUSHO KK 发明人 TAKAGAKI TETSUYA;MAEJIMA HIROSHI
分类号 H01L21/22;H01L21/00 主分类号 H01L21/22
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