METHOD FOR THE MANUFACTURE OF RESIST STRUCTURES USING SHORT WAVE UV WITH A COPOLYMER INCLUDING CHLORO OR CYANO SUBSTITUTED ACRYLIC DERIVATIVE

摘要

The invention relates to a method for the manufacture of positive resist structures by means of short-wave UV rays and has the objective to develop such a method in a manner such that increased sensitivity and resolution as well as high thermal stability and, in addition, transparency in the wavelength range above 260 nm can be achieved. According to the invention, it is provided for this purpose to use as the resist material copolymers of 1 to 70 mol % alkylmethacrylate with an alkyl radical having 1 to 4 C atoms, and 99 to 30 mol % of an ethylenically unsaturated monomer with chlorine and/or cyan substituents. The method according to the invention is particularly well suited for producing resist structures about 0.5 to 2 .mu.m thick by means of UV rays in the wave-length range between about 180 to 260 nm.