| 摘要 |
PURPOSE:To prevent the malfunction of a memory by forming a groove to the surface layer of a P type silicon substrate and burying the groove with an insulator. CONSTITUTION:A crystal defect region 1A is formed in a P type silicon substrate 1 in a stratiform manner, a surface layer 1B is isolated, and a memory capacitor 6 with a source region consisting of a first polycrystalline silicon gate layer 3, a second polycrystalline silicon gate layer 4 and an N<+> type diffusion layer 5 is formed to one surface layer section. A MOS transistor 10 with a source region and a drain region composed of a polycrystalline silicon gate layer 7 and N<+> type diffusion layers 8 and 9 is shaped to the other surface layer section. Grooves 15 are bored to the surface layer 1B, and the grooves 15 are buried with insulators 16, thus isolating the surface layer 1B into plural sections. The periphery of the MOS transistor 10 is surrounded completely by the crystal defect region 1A and the insulators 15. |
