| 摘要 |
PURPOSE:To form a thick oxide film having hih insulating property on the surface of an electrode in a capacitance section selectively and easily, and to form a desired dielectric film easily by using a silicon nitride film as a mask material for thermal oxidation. CONSTITUTION:A channel stopper region 102 and a thick Si oxide film 103 are formed selectively on the surface of a P type Si semiconductor substrate 101. An Si oxide film 104 and an Si nitride film 105 are removed selectively through etching in the surface of the substrate 101. A patterned polysilicon film 107 containing an N type impurity is formed. An inter-layer insulating oxide film 108 is shaped on the film 107. A gate oxide film 109 is formed, and a gate electrode 110 is shaped. An N<+> region 111 containing the N type impurity is formed, and a ring glass layer 112 is shaped. |
