| 摘要 |
<p>PURPOSE:To decrease the number of elements and to set codes in response to a mask by which the writing is executed by extracting the code detection output out of the juncture between the 1st MOSFET and a series circuit or between the 2nd MOSFET and a parallel circuit. CONSTITUTION:The 1st and 2nd MOSFET8 and 9 are equal to (p) channel enhancement type transistors. The source of each MOSFET is connected to a power supply VDD of the 1st potential, and the gate of these MOSFETs are connected alternately to their drains. A series circuit 10 is set between the source of the MOSFET8 and an earth power supply VSS of the 2nd potential; while a parallel circuit 11 is connected between the source of the MOSFET9 and a power supply VSS. Then the detection output is obtained from the drain of the MOSFET8 via an inverter 12. The code to be detected is set to the circuit 10; while the inverted code is set to the circuit 11 respectively.</p> |
