| 摘要 |
PURPOSE:To obtain a high-quality ZnS single crystal, by carrying out the molecular beam epitaxial growth on the (100) plane of the single crystal substrate at specific substrate temperature and rate of crystal growth using ZnS as the source. CONSTITUTION:Molecular beam epitaxial growth of ZnS on the (100) plane of a single crystal substrate made of GaP, GaAs or a material having nearly the same lattice constant, is carried out by using ZnS single crystal or polycrystal as the source, at a substrate temperature of 230-280 deg.C and a growth rate of 0.4-1mum/hr. A high-quality ZnS single crystal film can be obtained by this process, and a blue light-emitting element can be manufactured from the product. Since the technique to manufacture red and green light-emitting elements of GaP has already been estabilished, a monolithic device emitting three primary colors can be obtained by the use of GaP substrate. The use of the (100) plane of the substrate gives the cleavage angle of 90 deg., and facilitates the processing of chips. |
