| 摘要 |
PURPOSE:To reduce the nuclei of microscopic defects, to improve the yield of semiconductor elements, and to prevent the generation of cracks in an ingot, by heating a semiconductor material with radiation, and heat-treating under specific condition. CONSTITUTION:The ingot of a semiconductor material is e.g. held in a furnace in suspended state, and annealed at high temperature with a radiation heat source composed of infrared lamps. Thereafter, the ingot is quenched to a specific temperature at plural different rates of cooling according to the temperature of the ingot, and maintained at the temperature for a definite time interval. A semiconductor element containing few nuclei of microscopic defects can be obtained in high yield by this process and the generation of cracks in the ingot can be prevented thereby.
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