| 摘要 |
PURPOSE:To obtain a device including a P-N-P transistor characterized by high withstand voltage, a large current amplification factor, and a large cut-off frequency, by completely depleting the amount of impurities in a P type collector region when reverse bias having a specified value or more is applied across a base and a collector. CONSTITUTION:A P type collector region 22 is embedded in an N type region 6 and connected to a collector electrode 13 by a P type collector electrode extracting part 8 having high impurity concentration. The collector electrode extracting part 8 is formed in a ring shape, and a base region 9, which is separated from the N type region 6, is formed. An N<+> base region 21 is formed in the region 9. A P<+> emitter region 10 is formed in the base region 21. The regions 21 and 10 are connected to a base electrode 14 and an emitter electrode 15, respectively. Owing to the presence of the N<+> region 21, a depletion layer from a base-collector P-N junction is expanded to the P type collector region 15. The impurity concentration of the P type collector 15 is completely depleted when about 20V is applied across the base and the collector. |
