| 摘要 |
PURPOSE:To obtain a high density insulating film which has excellent electrical characteristic and is suited to manufacture of semiconductor integrated circuit by forming a film of organic silicon compound on a semiconductor substrate, selectively changing the part of film to the film which is dissoluble to a solvent and by changing a converted film to an oxide film. CONSTITUTION:An SiO2 film 2 and then an Si3N4 film 3 are formed on a P type Si substrate 1. A resist is applied on the Si3N4 film 3, the resist film 4 is left by the photolithography, except for the region other than the insulating and separating region, and etching and implantation of boron ion 6 are carried out. A film 7 of organic silicon compound is formed by applying the solution obtained by dissolving organic silicon compound to a solvent such as alcohol to the surface of resist film 4 and the groove 5 is irradiated with electron beam 8. Thereby, the groove 5 irradiated with electron beam 8 in the film of organic silicon compound 7 changes to the condition not dissolving to the solvent. The resist film 4 is removed by the oxygen plasma, thereafter Si3N4 is removed, and thereafter the Si3N4 film 3 is also removed. The groove 5 is buried by an SiO2 film 9 through a low temperature heat treatment and insulated separating region can be formed. |
