发明名称 LIQUID PHASE EPITAXIAL GROWTH APPARATUS
摘要 PURPOSE:To improve the efficiency of the epitaxial growing process and use the same melted solution, kept clean, for the growing process several times by a method wherein in an upper part of a boat, which is equipped with substrate holders, contains a melted solution reservoir and a piston while the lower part of the boat is loaded with the upper part of the boat. CONSTITUTION:A plurality of semiconductor substrates 15 are contained in a center cavity 14b. When the temperature of the apparatus is controlled at the prescribed temperature, a piston 10 is slid toward a stopper 9. Melted solution 11a is transferred by the movement of the piston 10 from a melted solution sink 12a to the center cavity 14b in which the semiconductor substrates 15 are stored and gets contact with the semiconductor substrates 15 to form the 1st epitaxial growth layers. The upper part 13 of the boat is slid and the center cavity 14b is positioned immediately above the melted solution 11b. The piston 10 is slid toward the stopper 9 again. The melted solution 11b is transferred by the movement of the piston 10 from a melted solution sink 12b to the center cavity 14b in which the semiconductor substrates 15 are stored and gets contact with the semiconductor substrates 15 to form the 2nd epitaxial growth layers.
申请公布号 JPS59189621(A) 申请公布日期 1984.10.27
申请号 JP19830065074 申请日期 1983.04.12
申请人 SHARP KK 发明人 SUGAWARA KAZUSHI;SHIMIZU MASABUMI;MIZUKI TOSHIO;HISAMATSU TADASHI
分类号 H01L21/208;(IPC1-7):H01L21/208 主分类号 H01L21/208
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