| 摘要 |
PURPOSE:To obtain the method for dielectric isolation of a narrow semiconductor element by a method wherein an SiO2 film is formed on a surface of a semiconductor substrate provided with grooves and the substrate is covered with coating glass and is baked, after which the coating glass and the SiO2 film are removed by etching to leave the SiO2 in the grooves. CONSTITUTION:Deep grooves 22 are formed on an Si substrate 21 by RIE and so on by using resist as a mask. Then the surface is thermally oxidized to form a thin SiO2 film 23 and an SiO2 film 24 is deposited by CVD. Next, the surface is coated with coating glass 25 such as Si(OH)4 to be levelled, after which the substrate is baked to make the coating glass SiO2 as well as the baking temperature is controlled so as to equalize the etching speed of the base SiO2 film and the coating glass. Next, etching is done uniformly from the surface by RIE or the like so as to form a dielectric isolation part 26 in which SiO2 is buried in the groove. |
