| 摘要 |
PURPOSE:To improve the yield and reliability of a high density semiconductor device such as an LSI by executing the plasma processing with the gas of carbon fluoride system in such a process that a thin film of aluminium or aluminium alloy is selectively removed by the reactive ion etching. CONSTITUTION:An aluminium film 10 is formed and then a resist mask film 11 for wiring patterning is also formed on a semiconductor substrate to be processed having completed formation of active elements and electrode contact holes 9a-9c to the insulating film 8 at the surface thereof, and then the aluminium film 10 exposed from the resist mask film 11 is etched by the reactive ion etching method. Thereafter, the gas in the etching chamber 21 is replaced with a mixed gas, for example, of the carbon tetra fluoride and oxygen (O2 mixing ratio of about 10-12%) having a pressure of about 0.3Torr, a high frequency power is then applied in order to execute the plasma processing to the surface of substrate to be processed, namely to the resist surface and etching surface of aluminium for about 120sec, for example.
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