| 摘要 |
PURPOSE:To obtain a high speed response element from a long wavelength band by a method wherein Zn ions are implanted to an N type Ge substrate wherein a net donor concentration is specified and are heat-treated, thus forming a high concentration Zn ion activated region and a low concentration one at the same time. CONSTITUTION:Zn ions are implanted to the N type Ge substrate 1 whose net donor concentration is 1X10<15>/cm<3>-4X10<15>/cm<3> by ion implantation, passing through the process of heat treatment at 897 deg.C for 30min in the atmosphere of nitrogen, and accordingly the relatively high concentration Zn ion activated region 17 and the relatively low concentration one 18 are formed at the same time. Thereafter, a guard ring 16 is formed by diffusing Zn under the condition of 650 deg.C and 9hr by thermal diffusion method. As a surface protection film 13, Si dioxide is adhered by CVD method, and the P side electrode 14 and the N side electrode 15 are vapor-deposited. Thus, an avalanche photodiode of a P-I-N structure can be manufactured, resulting in the production of the titled element of high speed response from the light response property at the wavelength of 1.55mum. |
