| 摘要 |
PURPOSE:To curtail sharply the processing time, and to contrive to enhance yield of a dielectric isolation substrate by a method wherein the beveling process of the outer periphery of the substrate and removal of poly-silicon adhered to the outer periphery of the back of the substrate are performed using a V-groove type grinding wheel. CONSTITUTION:The side of the outer periphery of a substrate after growth of poly-silicon is finished is processed by a beveling process using a grinding wheel 8. The sectional shape of the grinder 8 thereof has a V-groove type circular arc surface at the central part, and grinding is performed by pressing the rotating grinder 8 against the side of the outer periphery of the poly-silicon grown substrate. Thereupon the shaded part 9 is removed by the beveling process, poly- silicon adhered to the side of the outer periphery and the back of a wafer is removed completely, and the wafer can be processed to have the circular arc type convex side. In this case, the diameter of the wafer can be finished to have the same size with the single crystal substrate 1 by controlling depth of cut of the grinder 8. |
