发明名称 PROCESS OF SHEATHING FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the electrode, etc. of a semiconductor device from corrosion, and to enhance reliability of the device by a method wherein activation treatment is performed to outer leads according to an activator of acidic or neutral not containing a halogn element and an alkali metal, and after water washing is performed, plating treatment is performed, and then water washing and hot water washing are performed. CONSTITUTION:The prescribed element 1 is equipped on an island 2, the element 1 and inner leads 4 are connected by bonding wires 3, and they are sealed in one body with a resin sealing matter 5 as to lead out outer leads 6 outside to form a semiconductor device 10. The device is held as not to make the leads 6 to be contaminated, and is cleaned by ion exchange water without performing degreasing treatment. Then after activation treatment is performed according to an activator to the leads 6, and water washing is performed, solder plating and tin plating treatments are performed. At this time, as the activator, a solution of acid or neutral consisting of a sulphuric acid aqueous solution and a sulfate solution, and containing no alkali metal and no halogen element is used. After plating treatment is performed, water washing and hot water washing are performed, and then dried.
申请公布号 JPS59188928(A) 申请公布日期 1984.10.26
申请号 JP19830063326 申请日期 1983.04.11
申请人 TOSHIBA KK 发明人 TSURUSHIMA KUNIAKI
分类号 H01L23/50;H01L21/56;H01L23/48 主分类号 H01L23/50
代理机构 代理人
主权项
地址