| 摘要 |
PURPOSE:To complete oxidation in a short time at a low temperature and reduce the leakage current of a Ta film by a method wherein the Ta film is oxidized in high pressure oxygen at a low temperature, and an Si nitride film is adhesion-formed between the Ta film and an Si substrate. CONSTITUTION:An Si nitride film 2 is formed on the surface of an Si semiconductor substrate 1. Next, the Ta film 3 is formed on the film 2. Then, this structure is heat-treated in the atmosphere of high pressure oxygen at a low temperature of 600 deg.C or less, thus converting the film 3 all into a Ta oxide film 4. An electrode 5 is formed on such films 2 and 4. The oxidation of the Ta film can be completed in a short time at a low temperature by forming the capacitor by such a method. Since the film 2 exists between the film 4 and the substrate 1, the interaction between the film 4 and the substrate 1 is blocked, enabling to prevent the formation of Ta silicide having conductivity, and accordingly the leakage current can be reduced. |
