| 摘要 |
PURPOSE:To reduce the junction capacitance and the distribution capacitance of lead-out electrodes by improving the arrangement of said electrode from each semiconductor region by a method wherein the second semiconductor region of the reverse conductivity type is provided in the semiconductor region of the first conductivity type, and the third semiconductor region of the first conductivity type is provided in the second region. CONSTITUTION:An N type collector region 1 is formed in the Si substrate constituting a transistor for high frequency. Further, a P-base region 2 of the reverse conductivity to N type is formed, and then an N type emitter region 3 is formed in this region 2. The Si of a part of the emitter side surface junction 4 and the collector side one 5 is removed by etching by using a mask, thus forming a side surface junction removed groove 7. Besides, an oxide insulation film 8 is grown on the inner surface of the groove 7, and a base contact window 2b and an emitter contact window 3b are formed, respectively. A base lead-out electrode 2a and an emitter lead-out electrode 3a are extended on the insulation film 8, reducing the junction capacitance and the distribution capacitance of the electrodes, resulting in the improvement of the high frequency characteristic. |
